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AEGIS
SEMICONDUTORES LTDA.
A1A:22.XX
VOLTAGE RATINGS
Part Number A1A:22.02 A1A:22.04 A1A:22.06 A1A:22.08 A1A:22.10 A1A:22.12 A1A:22.14 A1A:22.16 VRRM , VR (V) Max. rep. peak reverse voltage TJ = 0 to 180OC 200 400 600 800 1000 1200 1400 1600 TJ = -40 to 0 C 200 400 600 800 1000 1200 1400 1600
O
VRSM , VR (V) Max. nonrep. peak reverse voltage TJ = 25 to 180 C 300 500 700 900 1100 1300 1500 1700
O
This datasheet applies to: Metric thread: A1A:22.XX, A1B:22.XX Inch thread: A2A:22.XX, A2B:22.XX
MAXIMUM ALLOWABLE RATINGS
PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 180 -40 to 180 22 125 43 0.32 IFSM Max. Peak non-rep. surge current 0.35
KkA
UNITS
O O
NOTES O 180 half sine wave
C C C
A
O
IF(RMS) Nom. RMS current
A 50 Hz half cycle sine wave 60 Hz half cycle sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms kA2s t = 8.3 ms t = 10ms
O Initial T J = 180 C, rated VRRM applied after surge.
0.39 0.42 0.47
O Initial T J = 180 C, no voltage applied after surge.
O Initial T J = 180 C, rated VRRM applied after surge.
I2t Max. I2t capability
0.51 0.66 0.72
O Initial T J = 180 C, no voltage applied after surge.
It
2 1/2
Max. I t
2 1/2
capability
t = 8.3 ms O Initial T J = 180 C, no voltage applied after surge. kA2s1/2 N.m(Lbf.in) I2t for time t x = I2t1/2 * tx1/2. (0.1 < tx < 10ms). -
F Mounting Force
5.5 2(~15)
AEGIS
SEMICONDUTORES LTDA.
A1A:22.XX
CHARACTERISTICS
PARAMETER VFM Peak forward voltage VF(TO)1 Low-level threshold VF(TO)2 High-level threshold rF1 Low-level resistance rF2 High-level resistance IRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. --------------------TYP. 1.35 ------------------MAX. UNITS 1.50 0.85 1.00 10.00 5.00 3.00 2.00 2.60 2.90 1.00 V V mW mA
O O O O
TEST CONDITIONS Initial T J = 25 C, sinusoidal wave, Ipeak = 69A. TJ = 180 O C Av. power = V F(TO) * IF(AV) +rF * [IF(RMS)]2 Use low values for IFM < pIF(AV) TJ = 180 OC. Max. Rated VRRM
C/W DC operation C/W 180O sine wave C/W 120O rectangular wave
O
C/W Mtg. Surface smooth, flat and greased. Single side. -----
----9(0.32) DO-203AA (DO-4)
g(oz.) JEDEC
180
Maximum Allowable Case Temperature
180
Maximum Allowable Case Temperature
Maximum Allowable Case Temperature (C)
Maximum Allowable Case Temperature (C)
170 160 150 140 130 120 110
180 30 90
170 160 150 140
30
130
60
120 110 100 90 80 70
*Rectangular waveform
120 90
60
120
180
DC
100 0 2 4 6 8 10 12 14 16 18 20 22 24 26
*Sinusoidal waveform
0
10
20
30
40
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
AEGIS
SEMICONDUTORES LTDA.
A1A:22.XX
Maximum Average Forward Power Loss
250
Maximum Average Forward Power Loss
30
Maximum Average Forward Power Loss (W)
300
30
Maximum Average Forward Power Loss (W)
250
200
200
60
150
60
150
100
90 120 180
90
100
120 180
50
DC
50
0 0
*Sinusoidal waveform
0
*Rectangular waveform
10
20
30
40
0
10
20
30
40
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
1000
Forward Voltage Drop
Transient Thermal Impedance
3.0
Transient Thermal Impedance (C/W)
Instantaneous Forward Current (A)
Zthjh 2.5
100
2.0 Zthjc 1.5
10
180C 25C
1.0
0.5
1 0.5 1.0 1.5 2.0 2.5 3.0
0.0 1E-3
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Time (s)
Fig. 5 - Forward Voltage Drop Characteristics
Fig. 6 - Transient Thermal Impedance Characteristics
AEGIS
SEMICONDUTORES LTDA.
A1A:22.XX
DO-203AA (DO-4)
SW 11
M6 x 1 10/32 UNF 2A
Fig. 7 - Outline Characteristics

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